simple drive requirement bv dss -20v small package outline r ds(on) 65m surface mount device i d - 4.2a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-amb thermal resistance junction-ambient 3 max. 90 /w parameter drain-source voltage gate-source voltage continuous drain current 3 -55 to 150 linear derating factor 1.38 -55 to 150 thermal data parameter total power dissipation operating junction temperature range storage temperature range continuous drain current 3 -3.4 pulsed drain current 1,2 -10 AP2305GN rating - 20 12 -4.2 0.01 the advanced power mosfets from apec provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. the sot-23 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s d g s sot-23 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
AP2305GN electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.1 -v/ r ds(on) static drain-source on-resistance v gs =-10v, i d =-4.5a - - 53 m v gs =-4.5v, i d =-4.2a - - 65 m v gs =-2.5v, i d =-2.0a - - 100 m v gs =-1.8v, i d =-1.0a - - 250 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 - - v g fs forward transconductance v ds =-5v, i d =-2.8a - 9 - s i dss drain-source leakage current (t j =25 o c) v ds =-20v, v gs =0v - - -1 ua drain-source leakage current (t j =55 o c) v ds =-16v, v gs =0v - - -10 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =-4.2a - 10.6 - nc q gs gate-source charge v ds =-16v - 2.32 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 3.68 - nc t d(on) turn-on delay time 2 v ds =-15v - 5.9 - ns t r rise time i d =-4.2a - 3.6 - ns t d(off) turn-off delay time r g =6 , v gs =-10v - 32.4 - ns t f fall time r d =3.6 - 2.6 - ns c iss input capacitance v gs =0v - 740 - pf c oss output capacitance v ds =-15v - 167 - pf c rss reverse transfer capacitance f=1.0mhz - 126 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.2a, v gs =0v - - -1.2 v trr reverse recovery time i s =-4.2a, v gs =0v, - 27.7 - ns qrr reverse recovery charge di/dt=100a/s - 22 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board ; 270 /w when mounted on min. copper pad. 12v 100 product specification 2 of 2 sales@twtysemi.com http://www.twtysemi.com 4008-318-123
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